Design and fabrication of vertical-injection GaN-based light-emitting diodes

Fabrication of InGaN-Based Vertical Light Emitting Diodes Using Electroplating

Group III–nitride semiconductors and their ternary solid solutions are very promising as the candidates for both short wavelength optoelectronics and power electronic devices (Nakamura et al. 1997; Nakamura et al. 1995; Lee, et al. 2010; Youn, et al. 2004). The AlGaN/GaN heterostructure field effect transistors (HFETs) have a great potential for future high-frequency and high-power applications...

Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light- Emitting Diodes

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN

We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward v...

10 GaN - based Light - Emitting Diodes

Light-emitting diodes (LEDs) offer several advantages over traditional light sources, such as smaller size, longer lifetime, higher efficiency, and greater mechanical ruggedness. Continuing developments in LED technology are producing devices with increased output power and efficiency as well as a wider range of colors [1]. Recent progress in the fabrication of GaN-based compound semiconductors...

GaN microdisk light emitting diodes

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